ts1 3 002 high voltage npn transistor 1 / 5 version: d 07 to - 92 product summary bv ceo 400v bv cbo 700v i c 0.2a v ce(sat) 0.5v @ i c / i b = 100ma / 10ma features high voltage high speed switching structure silicon triple diffused type npn silicon transistor ordering i nformation part no. package packing ts13002ct b0 to - 92 1kpcs / bulk ts13002ct b0g to - 92 1kpcs / bulk ts13002ct a3 to - 92 2kpcs / ammo ts13002ct a3g to - 92 2kpcs / ammo note: g denote for sb free block diagram absolute maximum rating ( ta = 25 o c unless otherwise n oted ) parameter symbol limit unit collector - base voltage v cbo 700v v collector - emitter voltage v ceo 400v v emitter - base voltage v ebo 9 v dc 0.2 collector current pulse i c 0.5 a collector power dissipation p d 0.6 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to ambient thermal resistance r? ja 122 o c/w pin definition : 1. emitter 2. collector 3. base
ts1 3 002 high voltage npn transistor 2 / 5 version: d 07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static collector - base voltage i c = 1 ma, i b = 0 bv cbo 700 -- -- v collector - emitter breakdown voltage i c = 1 0 ma, i e = 0 bv ceo 400 -- -- v emitter - base breakdown voltage i e = 1 ma, i c = 0 bv ebo 9 -- -- v collector cutoff current v cb = 700v, i e = 0 i cbo -- -- 1 ua emitter cutoff current v eb = 7v, i c = 0 i ebo -- -- 1 ua collector - emitter saturation voltage i c / i b = 50ma / 10ma i c / i b = 100ma / 10ma i c / i b = 200ma / 20ma v ce(sat)1 v ce(sat)2 v ce(sat) 3 -- -- -- 0.2 0.45 1 0.4 1 1.5 v base - emitter saturation voltage i c / i b = 50ma / 10ma i c / i b = 100ma / 10ma v be(sat)1 v be(sat)2 -- -- -- -- 1 1. 2 v dc current gain v ce = 10v, i c = 10ma v ce = 10v, i c = 100ma v ce = 10v, i c = 200ma h fe 1 h fe 2 h fe 3 10 20 10 -- -- -- 40 40 40 dynamic frequency v ce = 10v, i c = 0.1a f t 4 -- -- mhz output capacitance v cb = 10v, f = 0.1mhz cob -- 21 -- pf resistive load switching time (ratings) rise ti me t r -- 1.1 -- us storage time t stg -- 2 4 us fall time v cc = 125v, i c = 100m a, i b1 = i b2 = 20ma, t p = 25us duty cycle 1% t f -- 0.2 0.7 us note : pulse test: pulse width 5ms, duty cycle 10%
ts1 3 002 high voltage npn transistor 3 / 5 version: d 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. static characteri sti c s figure 2. dc current gain figure 3. v ce(sat ) v.s. v be(sat figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
ts1 3 002 high voltage npn transistor 4 / 5 version: d 07 to - 92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for sb free ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to - 92 dim ension millimeters inches dim min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 14.30(typ) 0.563(typ) d 0.43 0.49 0.017 0.019 e 2.19 2.81 0.086 0.111 f 3.30 3.70 0.130 0.146 g 2.42 2.66 0.095 0.105 h 0.37 0.43 0.015 0.017 i 1.10 1.30 0.043 0.051
ts1 3 002 high voltage npn transistor 5 / 5 version: d 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a prod uct description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any expres s or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the product s shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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